Infineon Technologies GS66508B-MR
- Part No.:
- GS66508B-MR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- GaNpx
- Description:
- Enhanced GaN E-mode technology for improved efficiency
- Quantity:
- Payment:
- Shipping:
Inventory:2,832
Please send an inquiry. Send us your inquiry, and we will respond immediately.
The GS66508B-MR is a high-performance Gallium Nitride (GaN) power transistor developed by Infineon Technologies (formerly GaN Systems). This 650V enhancement-mode GaN device delivers superior switching performance and high efficiency compared to traditional silicon MOSFETs. With extremely low switching losses and high current capability, it enables smaller, lighter, and more energy-efficient power conversion systems in automotive, industrial, and renewable energy applications.
Features
- Voltage Rating: 650V maximum drain-source voltage (VDS)
- Continuous Current: 30A at 25°C case temperature
- Ultra-low RDS(on): 50 mΩ typical for reduced conduction loss
- Fast Switching: Enables high-frequency operation with minimal switching loss
- Enhancement-Mode: Normally-off operation for safer and simpler design integration
- High Efficiency: Up to 98% system efficiency achievable in power conversion
- Thermal Efficiency: Excellent heat dissipation with low junction-to-case thermal resistance
- Low Gate Charge (Qg): Reduces driver losses and improves system responsiveness
- Lead-Free & RoHS Compliant for environmental sustainability
Applications
The GS66508B-MR is designed for next-generation high-efficiency power electronics. Its combination of high speed, low loss, and compact form factor makes it ideal for:
- Electric vehicle (EV) onboard chargers and DC/DC converters
- Renewable energy inverters and solar microinverters
- Industrial motor drives and robotics
- Data center and telecom power supplies
- Consumer and enterprise power adapters requiring high power density
Package
This device is housed in a GaN Systems MR package, which provides compact dimensions and superior thermal performance. The MR (bottom-cooled) design enhances heat dissipation efficiency, enabling higher power density and longer device life in demanding thermal environments.
Manufacturer
Infineon Technologies is a global leader in semiconductor solutions that make life easier, safer, and greener. Following its acquisition of GaN Systems, Infineon continues to pioneer GaN-based power semiconductors that deliver outstanding energy efficiency and switching performance. The GS66508B-MR represents Infineon's commitment to advancing the future of wide-bandgap (WBG) technologies for electric mobility, renewable energy, and industrial power applications.
OEMSTOCK has a large stock of GS66508B-MR Single FETs, MOSFETs from GaN Systems and we guarantee that they are original,brand new parts sourced directly from GaN Systems We can provide quality testing reports for GS66508B-MR upon your request. To obtain a quote, simply fill in the required quantity, contact name, and email address in the quick quote form on the right. Our sales representative will contact you within 12 hours.
- Specifications
- FAQ
- Product Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- GaNpx
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V
- Rds On (Max) @ Id, Vgs:
- 63mOhm @ 9A, 6V
- Vgs(th) (Max) @ Id:
- 2.6V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 6 V
- Vgs (Max):
- +7V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 242 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
1. How to order GS66508B-MR on DeepFinds Electronics?
Currently, DeepFinds Electronics only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.
2. How does DeepFinds Electronics guarantee that GS66508B-MR is from the original manufacturer or authorized agents?
We have a professional and experienced quality control team to strictly verify and test the GS66508B-MR. All suppliers must pass our qualification reviews before they can publish their products including GS66508B-MR on DeepFinds Electronics; we pay more attention to the channels and quality of GS66508B-MR products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
3. Are the GS66508B-MR price and inventory displayed accurate?
The price and inventory of GS66508B-MR fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.
4. What forms of payment are accepted?
Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.
Warm Tips: Some orders in certain payment forms may require handling fee.
5. How is the shipping arranged?
Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.
Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.
Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.
6. What is the process for return or replacement of GS66508B-MR?
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GS66508B-MR we delivered, we will accept the replacement or return of the GS66508B-MR only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of GS66508B-MR.
(3)The PartNo is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
7.How to contact us to get technical supports, such as GS66508B-MR pin diagram, GS66508B-MR datasheet?
If you need any after-sales service, please do not hesitate to contact us.
| Image |  |
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| Part Number | GS66508B-MR | GS66508B-TR |
| Manufacturer | Infineon Technologies | Infineon Technologies Canada Inc. |
| Series | - | - |
| Package/Case | GaNpx | Die |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V | 6V |
| Rds On (Max) @ Id, Vgs | 63mOhm @ 9A, 6V | 63mOhm @ 9A, 6V |
| Vgs(th) (Max) @ Id | 2.6V @ 7mA | 2.6V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 6 V | 6.1 nC @ 6 V |
| Vgs (Max) | +7V, -10V | +7V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 242 pF @ 400 V | 242 pF @ 400 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | Die | Die |
