IRF7759L2TRPBF.pdf


IRF7759L2TRPBF is a StrongIRFET™ N-channel power MOSFET developed by Infineon Technologies, packaged in DirectFET L8 (MG-WDSON-11). It is rated for 75V drain-source voltage, with maximum on-resistance Rds(on) of 2.3mΩ at VGS=10V, delivering ultra-low conduction loss for high-current power circuits. The DirectFET low-profile package is only 0.7mm thin and supports dual-sided cooling, greatly improving thermal dissipation in compact high-power designs.
This power MOSFET features high current handling capacity, low gate charge and excellent ruggedness. Its maximum junction temperature reaches 175°C, with operating temperature range from -55°C to +175°C. Moisture Sensitivity Level 1 (MSL1), no dry pack required for storage and handling, convenient for production. It is optimized for synchronous rectification, battery management systems, DC motor drives, inverters and high-current DC-DC converters.
Important reminder: IRF7759L2TRPBF is an End-of-Life (EOL) device from Infineon. Production has been discontinued, and only limited original stock is available in the market. It is suitable for BOM continuity maintenance and old project replacement; we can also provide alternative part recommendations upon request.
DeepFinds supply genuine IRF7759L2TRPBF in tape & reel packaging. RoHS compliant and halogen-free, full datasheet can be provided upon request. BOM quotation, component sourcing service and alternative part support are available for your legacy power and BMS projects.
Currently, DeepFinds Electronics only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.
We have a professional and experienced quality control team to strictly verify and test the IRF7759L2TRPBF. All suppliers must pass our qualification reviews before they can publish their products including IRF7759L2TRPBF on DeepFinds Electronics; we pay more attention to the channels and quality of IRF7759L2TRPBF products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
The price and inventory of IRF7759L2TRPBF fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.
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Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.
Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.
All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the IRF7759L2TRPBF we delivered, we will accept the replacement or return of the IRF7759L2TRPBF only when all of the below conditions are fulfilled:
(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.
(2)We are informed of the defect described above within 90 days after the delivery of IRF7759L2TRPBF.
(3)The PartNo is unused and only in the original unpacked packaging.
Two processes to return the products:
(1)Inform us within 90 days
(2)Obtain Requesting Return Authorizations
If you need any after-sales service, please do not hesitate to contact us.
| Image | ![]() |
| Part Number | IRF7759L2TRPBF |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Package/Case | DirectFET™ Isometric L8 |
| Packaging | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75 V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 375A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET™ Isometric L8 |