onsemi MMBT3906LT1G

Part No.:
MMBT3906LT1G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
DeepFinds ElectronicsMMBT3906LT1G.pdf
Description:
TRANS PNP 40V 0.2A SOT23-3
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Payment:
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Inventory:314,247

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MMBT3906LT1G:PNP Small-Signal Transistor,Single BJT Transistors
The MMBT3906LT1G from onsemi is a general-purpose PNP small-signal transistor in a compact SOT-23 package. It is designed for low-power switching, level shifting and analog signal amplification, offering stable gain, low saturation voltage and reliable operation across a wide temperature range for consumer, industrial and communication equipment.

Key Analysis of the MMBT3906LT1G

The MMBT3906LT1G is often paired with NPN types like MMBT3904LT1G to form complementary transistor stages, allowing flexible push-pull, inverter and driver topologies in compact SMD designs.

Operating Principle

As a PNP BJT, the device conducts when the base is driven more negative relative to the emitter. It is typically used for high-side switching, level shifting, current sinking or as the PNP half of a complementary pair with NPN transistors in analog and digital circuits.

Electrical Performance

The transistor supports moderate collector currents in the small-signal range and offers a stable DC current gain (hFE) across common operating regions. Low collector–emitter saturation voltage improves efficiency when used as a saturated switch in low-voltage rails.

Switching Behaviour

Designed for fast switching, MMBT3906LT1G is suitable for digital control, driver stages, level translation and waveform shaping, where short propagation times are important for timing accuracy and signal integrity.

Thermal & Reliability

onsemi's small-signal transistor process ensures consistent performance and long-term reliability. The SOT-23 package provides adequate thermal dissipation for low-power operation, assuming correct PCB copper area and thermal design practices are followed.

Package & Layout

The SOT-23 form factor enables high-density PCB layouts and is fully compatible with automated SMT assembly. Short lead lengths help minimize parasitic inductance and capacitance, benefitting both analog and digital performance at higher frequencies.

Typical Use Cases

MMBT3906LT1G is commonly used for high-side switching, complementary push-pull stages, signal inversion, biasing networks, sensor interfaces and low-power analog driver circuits.

Technical Characteristics

Transistor Type PNP Small-Signal BJT
Package SOT-23, surface-mount
Typical Collector Current Range Small-signal range suitable for low-power switching and amplification
Polarity PNP, suitable for high-side and sinking configurations
DC Current Gain (hFE) Moderate, stable gain across recommended operating currents
Saturation Voltage Low VCE(sat), improving conduction efficiency
Switching Speed Fast switching for logic, driver and timing circuits
Mounting SMT, reflow soldering compatible
Manufacturer onsemi

Pinout

MMBT3906LT1G uses the standard PNP SOT-23 small-signal transistor pin assignment:

1 – Base
2 – Emitter
3 – Collector

MMBT3906LT1G Pinout

Package & Mechanical Dimensions

The SOT-23 package offers a small footprint and low profile, ideal for compact PCBs and high-density modules. Following onsemi's recommended land pattern and stencil design helps achieve reliable solder joints and consistent coplanarity during mass production.

MMBT3906LT1G Package

Application Fields

Complementary Push-Pull Stages

Used with NPN counterparts (such as MMBT3904LT1G) to build push-pull drivers, audio stages and high-efficiency digital outputs.

High-Side Switching

Suitable for high-side load control, sensor power switching and low-current supply gating in embedded systems.

Level Shifting & Inversion

Useful for signal inversion, level shifting between logic domains and creating discrete inverting stages.

Analog Bias & Driver Circuits

Applied in bias networks, reference buffering, pre-driver stages and linear analog functions in low-power designs.

Equivalent Devices & Manufacturer

Equivalent PNP small-signal transistors include members of the generic 3906 family and other SOT-23 PNP BJTs with similar voltage, current and gain ratings. Engineers should compare Ic max, Vceo, hFE and package footprint when selecting drop-in alternatives.

onsemi is a leading global semiconductor company providing a wide range of discrete, power and analog devices with strong emphasis on automotive, industrial and energy-efficient applications. Its MMBT series transistors are widely adopted in high-volume designs for their electrical consistency and long-term supply stability.

Disclaimer

The information on MMBT3906LT1G presented here is based on manufacturer data and general design practice. Actual performance may vary with PCB layout, thermal environment and operating conditions. Always review the latest onsemi datasheet and validate the device in the target application before mass production.
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Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Power - Max:
300 mW
Frequency - Transition:
250MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3 (TO-236)

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3. Are the MMBT3906LT1G price and inventory displayed accurate?

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6. What is the process for return or replacement of MMBT3906LT1G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the MMBT3906LT1G we delivered, we will accept the replacement or return of the MMBT3906LT1G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of MMBT3906LT1G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as MMBT3906LT1G pin diagram, MMBT3906LT1G datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image MMBT3906LT1G
Part Number MMBT3906LT1G
Manufacturer onsemi
Series -
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 300 mW
Frequency - Transition 250MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
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