MMBT3906LT1G.pdf


The MMBT3906LT1G is often paired with NPN types like MMBT3904LT1G to form complementary transistor stages, allowing flexible push-pull, inverter and driver topologies in compact SMD designs.
As a PNP BJT, the device conducts when the base is driven more negative relative to the emitter. It is typically used for high-side switching, level shifting, current sinking or as the PNP half of a complementary pair with NPN transistors in analog and digital circuits.
The transistor supports moderate collector currents in the small-signal range and offers a stable DC current gain (hFE) across common operating regions. Low collector–emitter saturation voltage improves efficiency when used as a saturated switch in low-voltage rails.
Designed for fast switching, MMBT3906LT1G is suitable for digital control, driver stages, level translation and waveform shaping, where short propagation times are important for timing accuracy and signal integrity.
onsemi's small-signal transistor process ensures consistent performance and long-term reliability. The SOT-23 package provides adequate thermal dissipation for low-power operation, assuming correct PCB copper area and thermal design practices are followed.
The SOT-23 form factor enables high-density PCB layouts and is fully compatible with automated SMT assembly. Short lead lengths help minimize parasitic inductance and capacitance, benefitting both analog and digital performance at higher frequencies.
MMBT3906LT1G is commonly used for high-side switching, complementary push-pull stages, signal inversion, biasing networks, sensor interfaces and low-power analog driver circuits.
| Transistor Type | PNP Small-Signal BJT |
|---|---|
| Package | SOT-23, surface-mount |
| Typical Collector Current Range | Small-signal range suitable for low-power switching and amplification |
| Polarity | PNP, suitable for high-side and sinking configurations |
| DC Current Gain (hFE) | Moderate, stable gain across recommended operating currents |
| Saturation Voltage | Low VCE(sat), improving conduction efficiency |
| Switching Speed | Fast switching for logic, driver and timing circuits |
| Mounting | SMT, reflow soldering compatible |
| Manufacturer | onsemi |
MMBT3906LT1G uses the standard PNP SOT-23 small-signal transistor pin assignment:
1 – Base
2 – Emitter
3 – Collector

The SOT-23 package offers a small footprint and low profile, ideal for compact PCBs and high-density modules. Following onsemi's recommended land pattern and stencil design helps achieve reliable solder joints and consistent coplanarity during mass production.

Used with NPN counterparts (such as MMBT3904LT1G) to build push-pull drivers, audio stages and high-efficiency digital outputs.
Suitable for high-side load control, sensor power switching and low-current supply gating in embedded systems.
Useful for signal inversion, level shifting between logic domains and creating discrete inverting stages.
Applied in bias networks, reference buffering, pre-driver stages and linear analog functions in low-power designs.
Equivalent PNP small-signal transistors include members of the generic 3906 family and other SOT-23 PNP BJTs with similar voltage, current and gain ratings. Engineers should compare Ic max, Vceo, hFE and package footprint when selecting drop-in alternatives.
onsemi is a leading global semiconductor company providing a wide range of discrete, power and analog devices with strong emphasis on automotive, industrial and energy-efficient applications. Its MMBT series transistors are widely adopted in high-volume designs for their electrical consistency and long-term supply stability.
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| Image | ![]() |
| Part Number | MMBT3906LT1G |
| Manufacturer | onsemi |
| Series | - |
| Package/Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |